description RT3K66M is a composite transistor built with two ink0012ax chips in sc-88 package. feature ?input impedance is high, and not necessary to consider a drive electric current. ?vth is low, and drive by low voltage is possible. vth=1.02.0v ?low on resistance. r ds (on)=1.7(typ)i d =100ma, v gs =4.0v r ds (on)=1.0(typ)i d =100ma, v gs =10v ?high speed switching. ?small package for easy mounting. application high speed switching , analog switching RT3K66M composite transistor for high speed switching silicon n-channel mosfet outline drawing unit mm maximum rating (ta=25 ) symbol parameter rating unit v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d drain current 200 ma p d total power dissipationta=25 150 mw t ch channel temperature 150 t stg range of storage temperature -55 150 is ahaya ele c tr on i cs co rp o rati on terminal connector ? source1 ? gate1 ? drain2 ? source2 ? gate2 :drain1 jeita sc-88 0 0.1 0.65 0.9 1.25 2.1 0.65 0.65 2.0 0.2 0.13 marking ? ? c c . ? ? c c . tr.1 ? tr.2 ? tr.1 ? tr.2 ?
switching time test condition RT3K66M composite transistor for high speed switching silicon n-channel mosfet electrical characteristics (ta=25 ) limits symbol parameter test conditions min typ max unit v (br)dss drain-source breakdown voltage i d =100a, v gs =0v 30 - - v i gss gate-source leak current v gs =15v, v ds =0v - - 1.0 a i dss zero gate voltage drain current v ds =30v ,v gs =0v - - 1.0 a v th gate threshold voltage i d =250a, v ds = v gs 1.0 - 2.0 v | y fs | forward transfer admittance v ds =10v, i d =100ma - 245 - ms i d =100ma, v gs =4.0v - 1.7 - r ds(on) static drain-source on-state resistance i d =100ma, v gs =10.0v - 1.0 - c iss input capacitance - 23 - pf c oss output capacitance v ds =10v, v gs =0v,f=1mhz - 7.0 - pf t on - 30 - t off switching time v dd =5v , i d =10ma v gs =05v - 66 - ns is ahaya ele c tr on i cs co rp o rati on v dd =5v d.u. Q 1% common source ta=25 90% 10% 90% 10% 0v 5v v dd v ds(on ton toff tr tf 5v 0 10 s test circuit input waveform output waveform out r l v dd in 50 v dd =5v d.u. Q 1% common source ta=25 90% 10% 90% 10% 0v 5v v dd v ds(on ton toff tr tf 5v 0 10 s test circuit input waveform output waveform out r l v dd in 50 out r l v dd in 50
typical characteristics is ahaya ele c tr on i cs co rp o rati on id -vds 0 20 40 60 80 100 0510 drain-source voltage vds (v) drain current id (ma) ta=25 1.8 v 1.9 v 2.0 v 2.1 v vgs=2.2 v 2.3 v 2.4 v 2.5 v 2.6 v 2.7 v id -vds(low voltage region) 0 0.2 0.4 0.6 0.8 1 0 0.1 0.2 0.3 0.4 0.5 drain-source voltage vds (v) drain current id (ma) ta=25 1.5 v vgs=1.6 v 1.65 v 1.7 v 1.85 v 1.9 v 1.75 v 1.8 v id -vgs 1 10 100 1000 012345 gate-source voltage vgs (v) drain current id (ma) ta=25 vds=10v idr -vds 1 10 100 -0 -0.5 -1 -1.5 -2 drain-source voltage vds (v) drain reverse current idr (ma) ta=25 vgs=0v |yfs| - id 1 10 100 1000 1 10 100 1000 drain current id (ma) forward transfer admittance |yfs| (ms) ta=25 vds=10v rds(on) - id 0 1 2 3 4 5 0 50 100 150 200 drain current id (ma) drain-source on-stage resistance rds(on) () ta=25 10 v vgs=4 v c - vds 0.1 1 10 100 0.1 1 10 100 drain-source voltage vds (v) capacitance c (pf) coss ciss ta=25 vgs=0v t - id 1 10 100 1000 10000 0.1 1 10 100 drain current id (ma) switching time t (ns) ta=25 ton toff tr tf
marketing division, marketing planning departme nt 6 - 41 tsukuba, isahaya, nagasaki, 854 - 0065 japan keep safety first in your circuit designs! isahaya electronics corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility th at trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropri ate measures such as ( 1) placement of substitutive, auxiliary, ( 2) use of non - farmable material or ( 3) prevention against any malfunct ion or mishap. notes regarding these materials these materials are intended as a reference to our customers in the selection of the isah aya products best suited to the customer?s application; they don't convey any license under any intellectual prop erty rights, or any other rights, belonging isahaya or third party. isahaya electronics corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagram s, charts or circuit application examples contained in these materials . all information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, a nd are subject to change by isahaya electronics corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact isahaya electronics corporation or an authorized isahaya products distr ibutor for the latest product information before purchasing product listed herein. isahaya electronics corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human lif e is potentially at stake. please contact isahaya electronics corporation or an authorized isahaya products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transpor tation, vehicular, medical, aerospace, nuclear, or undersea repeater use. the prior written approval of isahaya electronics corporation is necessary to reprint or reproduce in whole or in part these materials. if these products or technolo gies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to t he export control laws and regulations of japan and/or the country of destination is prohibited. please contact isahaya electronics corporation or authorized isahaya products distributor for further details on these materials or the product s contained therein. feb.2009
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